S29GL256N10TFI020

3.0V, single power flash memory, 110 nm MirrorBit, TSOP56, S29GL256N10TFI020

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Price:: US $4.00~6.00 / piece [Get Latest Price]

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PartNumber:: S29GL256N10TFI020

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-30

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Part Number:S29GL256N10TFI020
US $4.00 - 6.00
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Product Summary

The S29GL256N10TFI020 is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL256N10TFI020 is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL256N10TFI020 has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input.

Parametrics

S29GL256N10TFI020 absolute maximum ratings:(1)Storage Temperature, Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: –0.5 V to +4.0 V; VIO: –0.5 V to +4.0 V; A9, OE#, ACC and RESET# : –0.5 V to +12.5 V; All other pins: –0.5 V to +12.5 V.

Features

S29GL256N10TFI020 features: (1)Single power supply operation: 3 volt read, erase, and program operations; (2)Enhanced VersatileI/O. control: All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC; (3)Manufactured on 110 nm MirrorBit process technology; (4)SecSi. (Secured Silicon) Sector region: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence; May be programmed and locked at the factory or by the customer; (5)Flexible sector architecture: S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors; S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors; S29GL128N: One hundred twenty-eight 64 Kword(128 Kbyte) sectors; (6)Compatibility with JEDEC standards: Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection; (7)100,000 erase cycles per sector typical; (8)20-year data retention typical.