Product Summary

The IRG4PC50UD is an insulated gate bipolar transistor with ultrafast soft recovery diode(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A).

Parametrics

IRG4PC50UD absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 55A; (3)IC @ TC = 100℃ Continuous Collector Current: 27A; (4)ICM Pulsed Collector Current: 220 A; (5)ILM Clamped Inductive Load Current: 220A; (6)TJ Operating Junction and TSTG Storage Temperature Range:-55 to +150℃.

Features

IRG4PC50UD features: (1)UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package.

Diagrams

IRG4PC50UD circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRG4PC50UD
IRG4PC50UD
International Rectifier
IGBT W/DIODE 600V 55A TO-247AC
Data Sheet
1-75: $3.82
IRG4PC50UD-EPBF
IRG4PC50UD-EPBF
International Rectifier
IGBT Transistors 600V UltraFast 8-60kHz
Data Sheet
0-1: $4.87
1-25: $3.56
25-100: $2.82
100-250: $2.71
IRG4PC50UDPBF
IRG4PC50UDPBF
International Rectifier
IGBT Transistors 600V UltraFast 8-60kHz
Data Sheet
0-1: $5.21
1-25: $3.82
25-100: $3.02
100-250: $2.90